| 摘要 |
A spin-valve thin-film magnetic element includes a substrate; an antiferromagnetic layer; a pinned magnetic layer in contact with the antiferromagnetic layer, the magnetization direction of the pinned magnetic layer being pinned by an exchange coupling magnetic field with the antiferromagnetic layer; a nonmagnetic conductive layer in contact with the pinned magnetic layer; a free magnetic layer in contact with the nonmagnetic conductive layer, the magnetization direction of the free magnetic layer being aligned in a direction perpendicular to the magnetization direction of the pinned magnetic layer; and a back layer composed of a nonmagnetic conductive material formed in contact with the free magnetic layer at the opposite side of the nonmagnetic conductive layer. The back layer is composed of at least one metal selected from the group consisting of Ru, Pt, Ir, Rh, Pd, Os, and Cr.
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