| 摘要 |
<p>A nitride semiconductor device, comprising a p-type nitride semiconductor layer (11), an active layer (12), and an n-type nitride semiconductor layer (13), the active layer (12) sandwiched between the p-type nitride semiconductor layer (11) and the n-type nitride semiconductor layer (13) further comprising at least a barrier layer (2a) having n-type impurities, an well layer (1a) formed of a nitride semiconductor layer containing (In), and a barrier layer (2c) having p-type impurities or grown up by undoping, wherein the barrier layer (2) is disposed as a barrier layer nearest the p-type layer side, whereby a carrier can be filled suitably to the active layer (12).</p> |
