SEMICONDUCTOR PLASMA ETCH EQUIPMENT

摘要

PURPOSE: A semiconductor plasma etch equipment is provided to improve etch uniformity by controlling convection within a chamber. CONSTITUTION: A gas is transmitted from an external gas tank to a gas injection hole formed on an upper portion of a chamber(100). The gas is transmitted to a wafer(106) through a multitude of hole formed on an upper electrode(103). The gas is changed to a plasma state if an RF power is applied between the upper electrode(103) and a lower electrode(104). The wafer(106) is etched by using plasma. The wafer(106) is located on a center portion of the lower electrode(104). The wafer(106) is fixed by a guide ring(107) formed on an edge of the lower electrode(104). A pump(114) is installed at a lower portion of one side of the chamber(100) in order to discharge the etch gas. A convection controller is installed around the lower electrode(104) in order to etch uniformly the wafer(106) by controlling convection within the chamber(100).