METHOD FOR FORMING CONTACT PAD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact pad of a semiconductor device is provided to prevent generation of a bridge formed between contact pads by forming an insulating layer having a contact hole. CONSTITUTION: A gate(251) protected by a shield layer(255) is formed on a side and an upper face of a semiconductor substrate(100). A dummy insulating layer is formed to cover a gap between the gates(251). A dummy contact hole is formed by patterning the dummy insulating layer. An interlayer dielectric(500) is formed on the dummy insulating layer in order to fill the dummy contact hole. A planarization process for the interlayer dielectric(500) is performed. A wet etch process for the planarized interlayer dielectric(500) is performed. The dummy insulating layer is removed selectively according to an etch selection ratio. A contact hole(550) is formed on a position of the removed dummy insulating layer. A conductive pad is formed to fill the contact hole(550).