发明名称 |
Method of producing a single crystal gallium nitride substrate and single crystal gallium nitride substrate |
摘要 |
GaN single crystal substrates are produced by slicing a GaN single crystal ingot in the planes parallel to the growing direction. Penetration dislocations which have been generated in the growing direction extend mainly in the bulk of the GaN substrate. A few of the threading dislocations appear on the surface of the GaN substrate. GaN substrates of low-dislocation density are obtained. <IMAGE> |
申请公布号 |
EP1172464(A1) |
申请公布日期 |
2002.01.16 |
申请号 |
EP20010116827 |
申请日期 |
2001.07.10 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
MOTOKI, KENSAKU;KASAI, HITOSHI;OKAHISA, TAKUJI |
分类号 |
C30B29/38;C30B25/02;H01L21/20;H01L21/301;H01L33/32;H01S5/323 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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