SEMICONDUCTOR INTEGRATED CIRCUIT AND NONVOLATILE MEMORY

摘要

PURPOSE: To provide a boosting circuit which can generate a high boosting voltage at 10 times or more o the basis of a comparatively low power-supply voltage in a semiconductor integrated circuit which comprises an internal boosting circuit such as a flash memory. CONSTITUTION: Charging pumps (CP11, CP12, CP10) which perform a first-stage boosting operation on the basis of the power-supply voltage are constituted to be of a capacitor parallel type. Charging pumps (CP21, CP22, CP20) which perform a second-stage boosting operation on the basis of a boosting voltage generated by the charging pumps are constituted to be of a capacitor serial type.