发明名称 PLASMA SOURCE OF LINEAR BEAM ION
摘要 PURPOSE: A plasma source of linear beam ion is provided to exhibit high reliability, long life time, power, gas efficiency and to increase the uniformity of ion beam current density by cross-section the power input unit. CONSTITUTION: A plasma source of linear beam ion comprises an ionization chamber(1) with a rectangular emission aperture, a working medium supply unit(13) to the chamber, a high-frequency power input unit to the chamber cavity and a magnetic system. The magnetic field induction value decreases from the chamber(1) walls to its longitudinal axis of symmetry and in direction of the emission aperture. To increase the uniformity of ion beam current density by its cross-section the power input unit is made in the form of two sections placed on the opposite walls of the ionization chamber(1). Each section is formed by the conductors(2) located in parallel on the side dielectric chamber walls along the emission aperture. In another structure the power input unit is made of at least two sections. Each section is formed by the conductors(2) located in parallel on the side chamber walls transverse to the longitudinal axis of symmetry of the emission aperture. The conductor(2) ends of each section are connected in series by terminating conducting elements.
申请公布号 KR20020004934(A) 申请公布日期 2002.01.16
申请号 KR20017005327 申请日期 2001.04.27
申请人 PLASMA TECH CO., LTD. 发明人 BUGROV GLEB ELMIROVICH;KONDRANIN SERGEI GENNADIEVICH;KRALKINA ELENA ALEXANDROVNA;PAVLOV VLADIMIR BORISOVICH
分类号 H01J27/16;H01J37/08;(IPC1-7):H05H1/46 主分类号 H01J27/16
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