| 摘要 |
PURPOSE: A method for preventing electromigration in a magnetic random access memory (MRAM) is provided to prevent the leads of the MRAM from being destroyed. CONSTITUTION: A method for preventing electromigration in an MRAM containing wordlines, bitlines intersecting the wordlines, and resistors provided at points of intersection between the wordlines and the bitlines, the resistors each having a resistance value influenced by a magnetic field in such a way that it is assigned to two logic states "1" or "0", which includes the steps of: simultaneously transmitting, over a wordline and a bitline associated with a selected resistor, in a programming step, DC signals for generating the magnetic field, each of the wordline and the bitline selected providing a respective DC signal forming the DC signals; and subsequently, transmitting over the wordline and the bitline to which the DC signals have been applied, further DC signals which are of opposite polarity to the DC signals.
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