发明名称 |
CHROMIUM ETCHING COMPOSITION |
摘要 |
PURPOSE: A chromium etching composition is provided to simplify etching operations for liquid crystalline display element gate or source/drain wiring thereof. CONSTITUTION: The chromium etching composition comprises 8-12wt.% ceric ammonium nitrate, 9-13wt.% perchloric acid, 0.9-1.1wt.% formic acid, the balance of water. The method for liquid crystalline display element gate or source/drain comprises photolithography of a gate electrode wiring; ashing the gate electrode wiring with oxygen; etching the aluminium of the ashed gate electrode wiring; strip of photoresist of the aluminium-ashed gate electrode wiring; etching chromium of the photoresist-stripped gate electrode wiring with the chromium etching composition of the present invention.
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申请公布号 |
KR20020004577(A) |
申请公布日期 |
2002.01.16 |
申请号 |
KR20000038604 |
申请日期 |
2000.07.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, JIN SU;RYU, GI HYEON;SHIN, JIN SEOP;YOO, JEONG SIK |
分类号 |
C23F1/16;(IPC1-7):C23F1/16 |
主分类号 |
C23F1/16 |
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