发明名称 CHROMIUM ETCHING COMPOSITION
摘要 PURPOSE: A chromium etching composition is provided to simplify etching operations for liquid crystalline display element gate or source/drain wiring thereof. CONSTITUTION: The chromium etching composition comprises 8-12wt.% ceric ammonium nitrate, 9-13wt.% perchloric acid, 0.9-1.1wt.% formic acid, the balance of water. The method for liquid crystalline display element gate or source/drain comprises photolithography of a gate electrode wiring; ashing the gate electrode wiring with oxygen; etching the aluminium of the ashed gate electrode wiring; strip of photoresist of the aluminium-ashed gate electrode wiring; etching chromium of the photoresist-stripped gate electrode wiring with the chromium etching composition of the present invention.
申请公布号 KR20020004577(A) 申请公布日期 2002.01.16
申请号 KR20000038604 申请日期 2000.07.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, JIN SU;RYU, GI HYEON;SHIN, JIN SEOP;YOO, JEONG SIK
分类号 C23F1/16;(IPC1-7):C23F1/16 主分类号 C23F1/16
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