| 摘要 |
PURPOSE: An integrated memory having memory cells with a magnetoresistive storage property is provided to overcome the disadvantages of the known memory devices, and in the case of a defective memory cell, which causes a short-circuit between a row line and a column line, thereby allowing a largely proper reading of data signals from or writing of data signals to the remaining memory cells. CONSTITUTION: An integrated memory having memory cells with a magnetoresistive storage property includes a plurality of column lines(BL0-BLn), a plurality of row lines(WL0-WLn), memory cells(MC0 each connected between a respective one of the column lines(BL0-BLn) and a respective one of the row lines(WL0-WLn), the memory cells(MC) having a magnetoresistive storage property, a sense amplifier connected to the column lines(BL0-BLn), a terminal for providing a selection signal, the row lines(WL0-WLn) respectively being connectable to the terminal in order to selectively read a data signal from a selected one MC3 of the memory cells and write a data signal to the selected one MC3 of the memory cells via one of the column lines(BL0-BLn) connected to the selected one of the memory cells MC and a control device(4). The control device controls the sense amplifier such that at least one of the column lines(BL0-BLn) not connected to the selected one MC3 of the memory cells and connected to at least one defective one MC2 of the memory cells causing a short-circuit between in each case one of the row lines(WL0-WLn) and one of the column lines(BL0-BLn) is electrically isolated in the sense amplifier for selectively reading and writing the data signal.
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