发明名称 Liquid precursor mixtures for deposition of multicomponent metal containing materials
摘要 The present invention is a composition for deposition of a mixed metal or metal compound layer, comprising a solventless mixture of at least two metal-ligand complex precursors, wherein the mixture is liquid at ambient conditions and the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides cyclopentadienyls, carbonyls, and their fluorine, oxygen and nitrogen substituted analogs. The present invention is also a process for deposition of a multiple metal or metal compound layer on a substrate of an electronic material, comprising: a) providing a solventless mixture of two or more metal-ligand complex precursors which constitute a liquid at ambient conditions, wherein the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides, nitrates, cyclopentadienyls, carbonyls, pyrazoles, and their fluorine, oxygen and nitrogen substituted analogs; b) delivering the solventless mixture by direct liquid injection to a flash vaporization zone to vaporize the solventless mixture; c) contacting the substrate under deposition conditions with a resulting vapor of the solventless mixture, and c) depositing a multiple metal or metal compound layer on the substrate from the solventless mixture.
申请公布号 EP1146141(A3) 申请公布日期 2002.01.16
申请号 EP20010107777 申请日期 2001.04.04
申请人 AIR PRODUCTS AND CHEMICALS, INC. 发明人 SENZAKI, YOSHIHIDE;ROBERTS, DAVID ALLEN;NORMAN, JOHN ANTHONY THOMAS;HOCHBERG, ARTHUR KENNETH
分类号 C01G25/00;C01B33/06;C01G35/00;C23C16/00;C23C16/06;C23C16/18;C23C16/30;C23C16/34;C23C16/40;C23C18/12;H01L21/285;H01L21/288;H01L21/316;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108;H01L39/24 主分类号 C01G25/00
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