发明名称 |
METHOD FOR INSULATING FINE STRUCTURE OF SINGLE CRYSTALLINE SILICON USING TRIPLE LAYER |
摘要 |
PURPOSE: A method for insulating a fine structure of a single crystalline silicon using a triple layer is provided to insulate a fine structure of a single crystalline silicon without an additional photo/etch process. CONSTITUTION: A thermal oxide layer is formed on a fine structure of single crystalline silicon by performing a thermal oxidation process. A conductive layer is insulated electrically with a single crystalline silicon substrate by the thermal oxide layer. A doped polysilicon layer is deposited on a surface of the thermal oxide layer by using an LPCVD(Low Pressure Chemical Vapor Deposition) method. An aluminium layer is deposited on an upper portion of a trench and a part of a sidewall of the trench by using a sputtering method or a deposition method. Each electrode is insulated by etching the deposited polysilicon layer and removing a part of the deposited polysilicon.
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申请公布号 |
KR20020004135(A) |
申请公布日期 |
2002.01.16 |
申请号 |
KR20000037659 |
申请日期 |
2000.07.03 |
申请人 |
CHO, DONG IL |
发明人 |
CHO, DONG IL;LEE, SANG U;PARK, SANG JUN |
分类号 |
B81B3/00;B81C1/00;H01L21/764;(IPC1-7):H01L21/31 |
主分类号 |
B81B3/00 |
代理机构 |
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地址 |
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