发明名称 |
AREA ARRAY AIR GAP STRUCTURE FOR INTERMETAL DIELECTRIC APPLICATION |
摘要 |
<p>A new method of forming air gaps between adjacent conducting lines of a semiconductor circuit by using a "holes everywhere" or a "reverse metal holes" mask that can be used to create holes in a dielectric layer. The dielectric that is being etched has been deposited across conducting lines, the holes that are being formed in this manner are closed by depositing a dielectric across the top of the holes. The holes can be etched across the entire layer of the deposited dielectric or can be etched in between the conducting lines. <IMAGE></p> |
申请公布号 |
SG85632(A1) |
申请公布日期 |
2002.01.15 |
申请号 |
SG19990001581 |
申请日期 |
1999.03.31 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD |
发明人 |
LAP CHAN;KHENG CHOK TEE;ONG KOK KENG;SEAH CHIN HWEE |
分类号 |
H01L21/768;(IPC1-7):H01L21/476;C01L21/76 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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