METHOD OF AND DEVICE FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL, AND SILICON CARBIDE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To solve the problems that during the growth of a silicon carbide single crystal, many crystal defects known as micropipes occur near the boundary between the single crystal and polycrystal, a strain occurs in the single crystal and further, a penetration hole-like micropipe parallel to the growth direction of silicon carbide single crystal occurs in the crystal by the deposition of polycrystal around the single crystal. SOLUTION: A seed crystal is held on a substrate disposed so as to set a space between it and the inner wall of a crucible in the low temperature portion inside the crucible.