METHOD FOR FABRICATING NON-VOLATILE MEMORY DEVICE HAVING DOUBLE SPACER

摘要

PURPOSE: A method for fabricating a non-volatile memory device having a double spacer is provided to reduce an interference between adjacent control gates and a damage of a semiconductor substrate in a spacer formation process. CONSTITUTION: A tunnel oxide layer(22) is formed on a semiconductor substrate(20). The first polysilicon layer is deposited on the whole surface of the above structure. The first polysilicon pattern is formed by patterning the first polysilicon layer. An interlayer gate insulation(26) is formed thereon. The second polysilicon layer is formed on the interlayer gate insulation(26). A capping layer(30) is formed on the second polysilicon layer by depositing an oxide layer on an upper portion of the second polysilicon layer. A control gate electrode(28a) and a floating gate(24b) are formed by patterning the capping layer(30), the second polysilicon layer, the interlayer gate insulation(26), and the first polysilicon pattern. A source/drain region(31) is formed by performing an ion implantation process. A buffer oxide layer and a nitride layer(32) are formed on the whole surface. An oxide layer is formed on the nitride layer(32). A spacer(34a) is formed by etching the oxide layer.