| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a deposition film, which can form a reaction film in a satisfactory bottom-coverage rate even on a substrate with a groove of a high aspect ratio and a hole and even on a substrate with a low heat-resistance such as a resin substrate, regardless of material of the substrate. SOLUTION: The method for forming the deposition film, which ionizes particles evaporated from an evaporation source in an ionizing space provided between the source and the substrate, and launches the evaporated and ionized particles perpendicularly into the substrate by a periodically fluctuating electric- field generated near the substrate, comprises ionizing a reactive gas in the ionizing space, launching the ionized reactive gas-particles perpendicularly onto the substrate along with the ionized evaporated particles, and forming a film, to form the film in a satisfactory bottom-coverage rate and prevent a temperature of the substrate from rising.
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