发明名称 |
Semiconductor device |
摘要 |
A semiconductor device which is provided with enhanced reliability and capable of preventing cracking of a layer below an interconnection layer and separation of the interconnection layer and a bonding pad electrode layer. The semiconductor device includes: an interconnection layer including a conductive material formed on a silicon substrate; an intermediate layer formed in contact with interconnection layer and including a titanium layer and a titanium nitride layer; and a bonding pad electrode layer which is in contact with the intermediate layer.
|
申请公布号 |
US6339257(B1) |
申请公布日期 |
2002.01.15 |
申请号 |
US19990352338 |
申请日期 |
1999.07.13 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
FUJIKI NORIAKI;YAMASHITA TAKASHI;HARADA SHIGERU;MIKI KAZUNOBU |
分类号 |
H01L21/60;H01L23/485;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/60 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|