| 摘要 |
A gate terminal plate (1) of a GCT thyristor (90), a connecting substrate (70) of a driving device and a cathode electrode plate (10) are interposed between a set of metal rings (7A) and (7C) fastened to each other with a screw (8). The cathode electrode plate (10) is connected to a cathode post electrode (31) of the GCT thyristor (90). The screw (8) is electrically insulated from the metal ring (7A) and the gate terminal plate (1) through an insulator (9). By this structure, the gate terminal plate (1) and the cathode electrode plate (10) are directly connected to a first metallized layer (5) and a second metallized layer (6) which are provided on two main surfaces of the connecting substrate (70) of the driving device, respectively. Thus, resistance and inductance components in a path for a gate current are reduced and an assembly is simplified.
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