Semiconductor memory device with replacement programming circuit

摘要

The semiconductor memory device capable of performing a repair using only the fuses for programming a defective address is provided. The semiconductor memory device is provided with at least two replacement programming circuits. Each replacement programming circuit includes a programming circuit for programming a defective address. An output of each replacement programming circuit is used as a signal for indicating whether to perform or not to perform a replacement. A word line that cannot be repaired by one replacement programming circuit is repaired using an output from another replacement programming circuit.