| 摘要 |
PROBLEM TO BE SOLVED: To manufacture an epitaxial wafer reduced in epitaxial flaw density and excellent in intrinsic gettering effect. SOLUTION: This method for producing a silicon single crystal by CZ method is characterized in that nitrogen is doped in the range of 1×1012-1×1014 atoms/cm3 and the cooling rate at temperatures of 1,150-1,020 deg.C is regulated to more than 2.7 deg.C/min, or further that at temperatures of 1,000-850 deg.C is regulated to below 1.2 deg.C/min. Alternatively, the nitrogen is doped in the range of 5×1013-1×1016 atoms/cm3 and the cooling rate at temperatures of 1,150-800 deg.C is regulated to more than 6.5 deg.C/min. The method for manufacturing an epitaxial wafer comprises growing an epitaxial layer on the surface of the silicon wafer cut out from the silicon single crystal which is produced by the above production method.
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