发明名称 |
Hard mask for integrated circuit fabrication |
摘要 |
A method of manufacturing small structures or narrow structures on an ultra-large scale integrated circuit utilizes a hard mask. A mask layer can be deposited over a top surface of a material above a semiconductor substrate. A mask layer can be lithographically patterned to have a feature. The side walls of the feature can be oxidized. The oxidized side walls can be removed to reduce the size of the feature below one lithographic feature. The material underneath mask layer can be etched in accordance with the feature without the oxidized side walls.
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申请公布号 |
US6339017(B1) |
申请公布日期 |
2002.01.15 |
申请号 |
US20000596993 |
申请日期 |
2000.06.20 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YU BIN |
分类号 |
H01L21/033;H01L21/28;H01L21/336;H01L29/78;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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