FERROELECTRIC MEMORY DEVICE HAVING HYDROGEN STORAGE LAYER FORMED ON GATE ELECTRODE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A ferroelectric memory device having a hydrogen storage layer formed on a gate electrode and a fabricating method thereof are provided to obtain a stable characteristic of threshold voltage by implanting hydrogen ions into a gate oxide layer. CONSTITUTION: A gate oxide layer(32) is formed on a silicon substrate(30) formed with an isolation layer(31). A polysilicon layer(33) and a hydrogen storage layer(34) are formed sequentially thereon. The hydrogen storage layer(34) is formed by using a CVD(Chemical Vapor Deposition) method or a PVD(Physical Vapor Deposition) method or an MOD(Metal Organic Deposition) method or ALD(Atomic Layer Deposition) method. A heat treatment process is performed to implant hydrogen ions into the hydrogen storage layer(34) and the polysilicon layer(33). A gate electrode pattern is formed by etching the hydrogen storage layer(34) and the polysilicon layer(33). A source/drain(35) is formed on both ends of the gate electrode. An insulating layer(36) for preventing hydrogen diffusion is formed on a surface of the whole structure. An interlayer dielectric is formed on the insulating layer(36). A ferroelectric capacitor is formed on the interlayer dielectric.