| 摘要 |
PROBLEM TO BE SOLVED: To produce an epitaxial wafer excellent in intrinsic gettering effect without needing additional heat treatment process. SOLUTION: This method for producing the epitaxial wafer comprises growing an epitaxial layer on the surface of the wafer which is cut out from a single crystal grown at a cooling rate of more than 7.3 deg.C/min at a temperature of 1,200-1,050 deg.C in the pulling-up operation by CZ method, or further, grown at a cooling rate of less than 3.5 deg.C/min at a temperature of 1,000-700 deg.C. In this case, it is preferable that the oxygen concentration in the silicon wafer is regulated to more than 12×1017 atoms/cm3.
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