| 摘要 |
On a silicon substrate, silicon oxide film is formed. On the silicon oxide film, a BPSG film is formed. On the BPSG film, a silicon oxide film which does not include at least phosphorus and has a thickness equal to or more than about 1 mum is formed as a protective film. On the silicon film, a fuse is formed. Covering the fuse, a silicon oxide film which does not include at least phosphorus is formed on the silicon oxide film. Thus, the corrosion of the fuse is prevented, whereby a semiconductor device with highly reliable metal interconnection can be obtained.
|
