| 摘要 |
In a semiconductor integrated circuit device comprising electrodes, loop wires, an input/output circuit, and an internal circuit arranged in order from a peripheral portion to a central portion of a substrate, and a pair of power wires each having a path from an associated one of the electrodes to the internal circuit through an associated loop wire. The pair of power wires are routed such that a connecting point of the one power wire from the associated loop wire to the internal wire corresponds to a connecting point of the other power wire from the associated loop wire to the internal wire, and the connecting point of the other power wire from the loop wire to the internal circuit corresponds to a connecting point of the one power wire from the associated electrode to the associated loop wire. An input/output circuit is moved closer to the electrodes, as a result of replacement of connecting positions of the paired power wires to the internal circuit, even from a viewpoint of the circuit configuration, to reduce the amount of surge noise leaking to the internal circuit. Consequently, a semiconductor integrated circuit device highly resistant to electrostatic breakdown and compatible with automatic designing is realized.
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