| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon epitaxial wafer in which a fancy phenomenon does not happen in a MOS device formed thereon, and a method for producing the same. SOLUTION: This silicon epitaxial wafer which does not cause a fancy phenomenon in the MOS device formed thereon has more than 20 MV/cm of oxide film pressure resistance and 1×1017-1×1018 atoms/cm3 or 5×1016-5×1017 atoms/cm3 of oxygen concentration in the boundary between an epitaxial layer and the silicon wafer. The method for producing the silicon epitaxial wafer comprising growing the epitaxial layer after heat treatment under a hydrogen atmosphere, is characterized in that an initial oxygen concentration of the wafer, the temperature in the heat treatment and the time required therefore are preset so as to get 1×1017-1×1018 atoms/cm3 or 5×1016-5×1017 atoms/cm3 of the oxygen concentration in the boundary between the epitaxial layer of the wafer and the silicon wafer. |
