| 摘要 |
PURPOSE: A method for cleaning a wafer using a laser and an Ar ECR plasma is provided to reduce a cleaning cost and a time for cleaning process by using an Ar ECR plasma, a laser, and a nitrogen gas. CONSTITUTION: A wafer is transferred automatically to a cleaning space. A natural oxide layer is removed from the transferred wafer by using Ar ECR plasma. A metal impurity is separated from a surface of the wafer by removing the natural oxide layer from transferred wafer. The contamination material such as particles, organics, and micro-contamination such as CMP(Chemical Mechanical Polishing) slurry are removed from the wafer by radiating a laser. A KrF excimer laser is used as the laser. The contamination material is discharged to the outside by injecting an inert gas to the separated contamination material.
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