FIELD RADIATION TYPE ELECTRON SOURCE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a field radiation type electron source in which the fluctuation of electron emitting direction is smaller than the conventional method and its manufacturing method. SOLUTION: An intense-field drift layer 6 having a porous polycrystalline silicon layer is formed on the conductive substrate 100 and a conductive film 7 is provided on the intense-field drift layer 6. The drift section 6a of the intense-field drift layer 6 is formed by smoothing the surface of a polycrystalline silicon layer 3 and then by making porous by anodizing and further by oxidizing by a rapid thermal oxidization technology.