| 摘要 |
<p>PROBLEM TO BE SOLVED: To simplify the manufacturing process without lowering its characteristics, and to realize stable LDD or an offset region with high r reproducibility independently of matching accuracy of a photolithography process for refinement, of the thin film transistor. SOLUTION: A source and drain electrodes, video signal wiring, a gate electrode and a part of scanning signal wiring connected with the gate electrode are simultaneously formed by the identical material and process, and the part of the video signal wiring where it crosses with the scanning signal wiring is formed by the identical material and process with which a pixel electrode or reflection electrode is formed. Moreover, a reaction product formed in a pattern sidewall part in self-alignment in dry etching of a metal film or a sidewall insulation film formed in self-alignment in an isotropic etching of a thick insulation film is used as a doping mask in the formation of an offset region or an LDD region.</p> |
