| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a wafer heating device which can correspond to a high speed (rapid) heating-up and cooling-down and which suppresses the fluctuation of a temperature to be a minimum. SOLUTION: The wafer heating device 5 has a cylindrical substrate 2 where one end is sealed by an aluminium nitride board 1 whose outer surface forms a wafer installation face 1a and whose thickness is 0.5 to 8 mm and at least an outer surface layer is constituted of a plasma resistant material, and a resistance heat generation-type face heater 3 which moves forwards/backwards in an axial direction in the cylindrical substrate 2 and in which boron nitride arranged to be away from or close to the inner base of the aluminium nitride board 1 is set to be an insulating base material.</p> |
