| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus, which eliminates the natural oxide film growth difference in wafer surfaces, to further make it less likely for natural oxide films to form, when a plurality of wafers are carried in a processing chamber. SOLUTION: In the semiconductor manufacturing apparatus body 100, a process chamber 11 is set at a specified temperature by a surrounding heater 12 and fed with a raw material gas (GAS) to form films on wafers. A boat base 14 guides a boat 15 for mounting wafers WF in/out an opening 13 of the chamber 11 (load/unload). When the wafers WF are carried in (loaded), the chamber 11 is purged with an inert gas, such as N2 and an inert gas feed mechanism 16 is provided for sending the inert gas (N2 gas) into the boat 15 from the boat base 14 and blowing it near the mounting part of each wafer WF.</p> |
