| 发明名称 |
PROTECTIVE LAYER BEFORE DEPOSITING ALTERNATE LAYER |
| 摘要 |
PROBLEM TO BE SOLVED: To form a sealing layer before a high conformality ALD layer is formed on a porous layer in an integrated circuit. SOLUTION: A damascene metallization method comprises a step for making a trench in a desired interconnect pattern in a porous insulation layer formed on a semiconductor substrate. |
| 申请公布号 |
JP2002009078(A) |
申请公布日期 |
2002.01.11 |
| 申请号 |
JP20010144436 |
申请日期 |
2001.05.15 |
| 申请人 |
ASM MICROCHEMISTRY OY |
发明人 |
IBO RAAIEEMAAKAA;SOININEN PEKKA T;ERNST H A GURANNEMAN;HAUKKA SUVI P |
| 分类号 |
H01L21/28;C23C16/04;C23C16/44;C23C16/455;H01L21/285;H01L21/3205;H01L21/768;H01L23/52;H01L23/522;H01L23/532;(IPC1-7):H01L21/320 |
主分类号 |
H01L21/28 |
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