发明名称 MANUFACTURING METHOD FOR SURFACE ACOUSTIC WAVE DEVICE AND MANUFACTURING DEVICE FOR THE SURFACE ACOUSTIC WAVE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method for a surface acoustic wave device by which excellent adherence of a metallic film can be attained and no cracking of a piezoelectric substrate or the like is caused. SOLUTION: The manufacturing method includes a 1st step where a reference temperature of a piezoelectric substrate is set, a 2nd step where the piezoelectric substrate is cooled when the temperature of the piezoelectric substrate gets higher than the reference temperature by a prescribed temperature or over during a metallic film forming process, and a 3rd step where the piezoelectric substrate is heated when the temperature of the piezoelectric substrate is lower than the reference temperature by the prescribed temperature or over during the metallic film forming process. Heating or cooling the piezoelectric substrate in a way of approaching the temperature of the piezoelectric substrate to the reference temperature can maintain the temperature of the piezoelectric substrate during the metallic film forming process within a range of 100-140 deg.C when the temperature of the piezoelectric substrate is measured while the metallic film is formed on the piezoelectric substrate and the temperature of the piezoelectric substrate is apart from the reference temperature by the prescribed temperature or over.
申请公布号 JP2002009568(A) 申请公布日期 2002.01.11
申请号 JP20000191605 申请日期 2000.06.26
申请人 TOSHIBA CORP 发明人 OKAZAKI HIROKI
分类号 H03H3/08;(IPC1-7):H03H3/08 主分类号 H03H3/08
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