SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a GaN semiconductor laser which is formed with a resonator thereon by a selective growth. SOLUTION: A GaN semiconductor laser has a double heterostructure that a Ga0.8In0.2N active layer 5 is held between an n-type Al0.1Ga0.9N clad layer 4 and a p-type Al0.1Ga0.9N clad layer 6 via an n-type GaN contact layer 3 on the face (0001) sapphire substrate 1. A p-type GaN contact layer 7 is provided on the upper part of the layer 6 and a p-side electrode 8 is provided on the side of the layer 7. As the semiconductor multilayer film comprising the layer 5 is formed in an aperture formed in an insulating film by a selective growth, a resonator mirror can be formed on the GaN semiconductor laser by a selective growth even though an etching is not used.