| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for reducing a hollow (a divot) occurring at the end part of an element region and an element isolation region for the purpose of an oxide film removal process carried out repeatedly in forming a groove buried type element isolation region of a semiconductor device, and further to provide a technique for decreasing an oxidizing treating temperature after having formed a STI groove so as to isolate the element region. SOLUTION: In this method for manufacturing the semiconductor device, a silicon film is formed on the element isolation groove formed on the semiconduction substrate and on a first insulating layer, or after having formed the silicon film on an isolation mask opening and on the first insulating layer, the element isolation groove is formed, and the surface of the element isolation groove and the silicon film are then oxidized. As a result, the silicon film becomes an etching stopper in an oxide film removal process and thus the divot can be reduced. |
