| 摘要 |
PROBLEM TO BE SOLVED: To speed up film-forming by assuring good composition of a thin film and constantness in film thickness. SOLUTION: A shower head 9 is provided, in a reactive furnace 8 of an MOCVD device, which comprises a plurality of jetting ports for supplying at a constant density, organic metal gas to the surface of a substrate 10 and a plurality of exhaust ports for supplying at a constant density, oxidizing gas. A heater is provided, near the surface on substrate side of the shower head 9, for heating interior to a temperature which is higher than that for thermally decomposing the organic metal gas but is lower than that for film-forming.
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