| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a repetitive pn junction having a low ON resistance and excellent breakdown strength characteristics, and a semiconductor device using that method. SOLUTION: A p-type epitaxial layer 11 is formed on a p-type silicon substrate 10, and an n-type epitaxial layer 21 is formed on an n-type silicon substrate 20. Meanders 22a, 21a are then formed on respective substrates using RIE technology. Subsequently, the meanders 22a, 21a are fitted to each other and caused to react in high temperature atmosphere (mixture gas). Since a p-type film or an n-type film is formed in the gaps at the time of fitting, a more rigid and electrically stable repetitive pn junction is formed. Finally, it is polished from one substrate side to form a super junction. Since the p-layer and the n-layer are formed by epitaxial growth technology, a heavily doped pn junction is formed with high accuracy. According to the method a semiconductor device having a low ON resistance and a high withstand voltage can be fabricated.
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