| 摘要 |
PROBLEM TO BE SOLVED: To obtain a gas-spraying-system drying method and device that is set to an inexpensive centrifugal drying system that can be handled easily, and can completely dry a surface to be dried. SOLUTION: In this gas-spraying-system drying method, a gas-spraying-system drying device 10 is used. In this case, an oxygen or hydrogen gas that is supplied into a gas supply pipe 12 is excited by a plasma-generating device 13, is sprayed from a pair of spraying nozzles 11A and 11B that is provided while the nozzles face the surface to be dried of a semiconductor wafer S rotating at high speed and its back surface, and is allowed to react to remaining water W on the surface to be dried, thus also especially removing and drying the remaining water W existing at the deep part of a recessed part Sa on the surface to be dried as the oxygen and hydrogen gases.
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