| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a quality crystalline thin film, and a method of manufacturing a semiconductor device using the film. SOLUTION: An amorphous silicon film 31 is formed on a quartz substrate 35 by low-pressure CVD method, and then a metal film 33 is formed on the amorphous silicon film 31. A heat treatment is conducted to recrystallize and convert the amorphous silicon film 31 into a polycrystalline silicon film 36. Thereafter, a part of the metal film 33 above a channel region 32 is removed. Thus, metal atoms, which enter the surface layer of the channel region 32 during the heat treatment, are removed. Next, laser annealing is conducted by irradiating with an excimer laser, which improves the quality of crystal grains. During the laser annealing, there is no infiltration of the metal film 33 into the thin-film channel region 32, because there is no metal film 33 in the upper channel region 32. Thus, optimized channel region 32 can be formed, while the metal atoms infiltrate other regions to increase the adhesiveness, and at the same time, the contact resistance is reduced. By manufacturing a semiconductor device using this substrate, manufactured semiconductor device will have reduced leakage current and contact resistance.
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