发明名称 |
METHOD AND EQUIPMENT OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method and equipment of manufacturing a semiconductor device, which can both objectively and automatically determine the requirements for converting an amorphous silicon film into a polycrystallione silicon film through laser irradiation. SOLUTION: In this manufacturing method, laser is irradiated on each lot under common laser irradiation conditions. The method comprises a process of forming a trial laser irradiated region under trial conditions and a process of determining the laser irradiation conditions for the lot, based on the optical information about the light reflected from the trial laser irradiated region.
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申请公布号 |
JP2002008976(A) |
申请公布日期 |
2002.01.11 |
申请号 |
JP20000184399 |
申请日期 |
2000.06.20 |
申请人 |
MITSUBISHI ELECTRIC CORP;SEIKO EPSON CORP |
发明人 |
AOKI OSAMU;ISHIGURO HIDETO |
分类号 |
H01L21/20;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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地址 |
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