发明名称 METHOD AND EQUIPMENT OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method and equipment of manufacturing a semiconductor device, which can both objectively and automatically determine the requirements for converting an amorphous silicon film into a polycrystallione silicon film through laser irradiation. SOLUTION: In this manufacturing method, laser is irradiated on each lot under common laser irradiation conditions. The method comprises a process of forming a trial laser irradiated region under trial conditions and a process of determining the laser irradiation conditions for the lot, based on the optical information about the light reflected from the trial laser irradiated region.
申请公布号 JP2002008976(A) 申请公布日期 2002.01.11
申请号 JP20000184399 申请日期 2000.06.20
申请人 MITSUBISHI ELECTRIC CORP;SEIKO EPSON CORP 发明人 AOKI OSAMU;ISHIGURO HIDETO
分类号 H01L21/20;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):H01L21/20 主分类号 H01L21/20
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