| 摘要 |
PROBLEM TO BE SOLVED: To prevent the drop of yield due to the corrosion of a focus ring and the generation of particles and to reduce the manufacture cost of a semiconductor device. SOLUTION: When the substrate 7 is arranged on an electrode 6 in a processing chamber 1 where reactive gas is introduced, the electrode 6 generates plasma and the substrate 7 is processed, the focus ring of a plasma processor is installed to surround the peripheral edge of the substrate 7. The focus ring is provided with a first member 10 which has a surface that is substantially confronted with the surface of the substrate 7 in parallel in the processing chamber 1 and is close to the peripheral edge of the substrate 7, and a second member 11 arranged below the first member 10 to support it. When the surface is deteriorated, not the whole focus ring is exchanged like a conventional case, but only the first member 10 where the particles are remarkably generated can be exchanged. The operation cost of the plasma processor such as dry etching and the manufacture cost of the semiconductor device are suppressed. |
