| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of growing a semiconductor layer, which suppresses the size of produced voids in the Pendeo growth method and also the inclination of the c-axis of the crystal in the semiconductor layer to reduce defects in this layer, and to provide a method of manufacturing semiconductor light-emitting elements using the same. SOLUTION: A first semiconductor layer 12b of a III-V compound, such as GaN, is projectedly formed on a substrate 11, and a second semiconductor layer 12 of a III-V compund, such as GaN, is grown in vapor phase on the first layer 12b surface at a higher growth rate Gb in a main surface inward direction of the substrate than the growth rate Ga in the vertical direction with respect to the main surface of the substrate with the pressure in a vapor phase growth reactor chamber being controlled, so that this pressure is higher than 400 Torrs, whereby the side S of the underside of the second semiconductor layer 12 makes an acute angle with its underside so that the side S forms a (11-22) plane, etc. |
