SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provdie an inexpensive semiconductor device by forming a crystalline semiconductor in a low temperature process. SOLUTION: A metal film 2 in which the most adjacent inter-atomic distance Dm between metal elements is 1.00<=Dm/Dsi<=1.20 to the most adjacent inter- atomic distance Dsi of silicon is formed on a substrate 1, and a crystalline silicon film 3 with the hydrogen and halogen content to silicon of 0.01-3 atom.% is formed thereon by vapor phase growth of mixture gas containing silicon, and at least hydrogen and a halogen element.