| 摘要 |
PROBLEM TO BE SOLVED: To uniform the peak-to-peak of a high frequency voltage in an electrode face which is the cause of the improvement of the uniformity of a plasma processing, in a plasma processor where a planar electrode in which an object to be processed is installed in a vacuum chamber, high frequency power is applied at the back of the electrode, plasma is generated on a side where the processed object is installed for plasma-processing. SOLUTION: A first dielectric 13 which is formed in such a way that it is sequentially thickened along a direction to an outer peripheral part from a center where high frequency power is applied is arranged in a lower electrode 5 and the impedance of the lower electrode 5 is varied in the periphery of the center and the outer peripheral part. Thus, voltage drops differ in respective parts in the lower electrode 5 and the peak-to-peak of the high frequency voltage in the lower electrode 5 is uniformed. Consequently, electric field intensity in the lower electrode 5 is uniformed, ion energy accelerated by an electric field is uniformed in the substrate face and the uniformity of the plasma processing is improved.
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