| 摘要 |
PROBLEM TO BE SOLVED: To provide a double-headed high frequency induction heating type epitaxial film forming device in which a high frequency current is fed from a high frequency power source to a pair of furnace bodies through high frequency switches and a wafer disposed in the furnace bodies is subjected to induction heating by a high frequency current flowing in an induction coil to form a film. SOLUTION: The inside of furnace bodies 11, 12 is simultaneously purged for a predetermined time. A driving motor part is simultaneously rotated and contact blades 65, 66 of the L furnace body and the R furnace body are connected to L side and R side contact clips 63, 64. After a high frequency current is simultaneously fed from a high frequency power source 14 to the furnace bodies 11, 12 to heat up the furnace bodies, an epitaxial layer is simultaneously film-formed against a wafer disposed in the furnace bodies 11, 12. The furnace body contact blades 65, 66 are separated at the time when a heat down of the furnace bodies 11, 12 is completed. A power of the high frequency power source 14 is turned off and a purge of the furnace bodies 11, 12 is carried out to complete a preparation of the film-forming of the subsequent epitaxial layer.
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