| 摘要 |
PROBLEM TO BE SOLVED: To grow favorable optical confinement layers when a ridge semiconductor laser is formed. SOLUTION: A second ridge-shaped upper clad layer 6 and a contact layer 7 are formed by an etching using a mask 8 consisting of an SiO2 film and following the formation, optical confinement layers 10 which are N-type Aly2 Ga(1-y2)As layers are selectively formed on both sides of a ridge part 12 utilizing the mask 8 by an MOCVD method. At that time, zinc which is impurities for controlling polarity of the layers 10 to a P-type is also fed to the layers 10 simultaneously with each constituent element feeding raw material containing impurities for controlling the layers 10 to an N-type. The addition amount of the zinc is set so as to come to 1×1019 cm-3 or more in the layers 10.
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