| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect compound semiconductor device having an excellent gate pad without complicating the processes and reduction of throughput. SOLUTION: In this device, a gate pad part 2 is made of a semiconductor, and the topmost layer 3 of the gate pad part 2 is made of a semiconductor capable of achieving ohmic contact with a gate electrode 5 without a nonalloy material.
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