METHOD FOR MANUFACTURING STACKED DOUBLE POLYSILICON/MOS CAPACITOR USING SiGe INTEGRAL MECHANISM

摘要

PROBLEM TO BE SOLVED: To provide a stacked double polysilicon/MOS capacitor useful as the component of a BiCMOS device including a semiconductor substrate forming a first conductivity-type area on the surface. SOLUTION: A gate oxide overlapped on the first conductivity-type area is formed on the semiconductor substrate. A first polysilicon layer doped with an N type dopant or a P type dopant is formed at least on a gate oxide layer. A dielectric layer is formed on the first polysilicon layer. A second polysilicon layer doped with the same dopant as the first polysilicon layer or a different dopant is formed on the dielectric layer.