发明名称 |
Configuration of deep and less deep insulating regions within the substrate of an integrated circuit prior to the configuration of the transistors |
摘要 |
Prior to the implementation of transistors, one configures within the substrate a deep insulated drain following the configuration within the substrate of a less deep insulated drain lengthening the deep drain. The configuration of the deep drain includes a coating of the internal walls of the drain by an initial layer of oxide (100) obtained by a rapid thermal oxidation and a filling of the drain with polysilicon (120) inside an envelope formed with an insulating material (101). The configuration of the less deep drain also includes a coating of the internal walls with an initial oxide layer (15) obtained by rapid thermal oxidation and a filling with an insulating material (16, 17). An Independent claim is also included for an integrated circuit incorporating within a substrate some insulating deep drain and less deep drain regions separating the transistors. |
申请公布号 |
FR2811473(A1) |
申请公布日期 |
2002.01.11 |
申请号 |
FR20000008686 |
申请日期 |
2000.07.04 |
申请人 |
STMICROELECTRONICS SA |
发明人 |
MARTY MICHEL;BAUDRY HELENE;LEVERD FRANCOIS |
分类号 |
H01L21/316;H01L21/762;H01L21/763 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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