发明名称 MEMORY INTERFACE SYSTEM AND DATA PROCESSING SYSTEM
摘要 <p>PROBLEM TO BE SOLVED: To provide an interface system, which is not affected by voltage difference between memory power supply voltage and memory controller power supply voltage, and a data processing system, which is advantageous in terms of processes or costs and can minimize the restriction for a power supply voltage when constituting the data processing system. SOLUTION: A memory 100 is provided with channel lines 110 and 120 for connecting to a memory controller 150, and the channel lines 110 and 120 respond to a terminal voltage VTER independent of a memory power supply voltage VDD1 and a memory controller power supply voltage VDD2.</p>
申请公布号 JP2002007309(A) 申请公布日期 2002.01.11
申请号 JP20010136367 申请日期 2001.05.07
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 TEI TAISEI;SO HEISEI;PARK MYUN-JOO
分类号 G11C11/417;G06F1/26;G06F1/28;G06F1/30;G06F13/16;G06F13/40;G11C7/10;(IPC1-7):G06F13/16 主分类号 G11C11/417
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